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IPB017N10N5 The Infineon IPB017N10N5 is an N-channel MOSFET with a 100V drain-source voltage and a maximum on-resistance of 1.7 mΩ. It is supplied in a PG-TO 263-7 package.
Mfr Part #:

IPB017N10N5

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB017N10N5 is an N-channel MOSFET with a 100V drain-source voltage and a maximum on-resistance of 1.7 mΩ. It is supplied in a PG-TO 263-7 package.
✓ Total Stock: 3,237 pcs

IPB017N10N5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,209 pcs
On Request
3209 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
28 pcs
On Request
28 pcs On Request 1 On Request On Request 18+ On Request On Request
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IPB017N10N5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type
Package / Case
Power Dissipation
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IPB017N10N5 Description

Short technical summary and product information.

The Infineon IPB017N10N5 is a high-performance N-channel MOSFET from the OptiMOS 5 family, designed for demanding applications requiring efficient switching. It features a maximum drain-source voltage (VDS) of 100V and a very low maximum on-resistance (RDS(on)) of 1.7 mΩ at 25°C.

 

This MOSFET offers a continuous drain current (ID) of up to 273A at 25°C, making it suitable for high-power applications. It also boasts a pulsed drain current capability of 1092A and an avalanche energy rating of 1166 mJ.

 

The device is packaged in a PG-TO 263-7 surface-mount package, facilitating integration into various electronic designs. Its features, including excellent gate charge x RDS(on) product (FOM) and 100% avalanche tested, make it ideal for high-frequency switching and synchronous rectification applications.

IPB017N10N5 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: Infineon IPB017N10N5 N-channel MOSFET
Subcategory: N-channel

IPB017N10N5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB017N10N5 Features

  • 100V drain-source voltage rating.
  • Low 1.7mΩ maximum on-resistance.
  • High 273A continuous drain current.
  • PG-TO 263-7 surface mount package.
  • Ideal for high-frequency switching.

IPB017N10N5 Applications

  • High current DC-DC converters.
  • Motor drives and power inverters.
  • Primary side switching in power supplies.
  • Battery protection and management systems.

IPB017N10N5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (VDS) of the IPB017N10N5?

The maximum drain-source voltage is 100V.

What is the on-resistance (RDS(on)) of the IPB017N10N5?

The maximum on-resistance is 1.7mΩ at 25°C.

What is the continuous drain current rating of the IPB017N10N5?

The maximum continuous drain current is 273A at 25°C and 209A at 100°C.

What is the operating junction temperature range of the IPB017N10N5?

The operating junction temperature range is -55°C to 175°C.

What is the power dissipation rating of the IPB017N10N5?

The maximum power dissipation at 25°C is 375W.

What package is the IPB017N10N5 available in?

The IPB017N10N5 is available in a surface-mount PG-TO 263-7 package.

Is the IPB017N10N5 halogen free and lead-free?

Yes, the IPB017N10N5 is both halogen free and lead-free (Pb-free) as verified in the datasheet.

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