IPB015N08N5ATMA1 N-Channel MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 180A continuous drain current. Housed in a TO263-7 (D2PAK-7) package.
Mfr Part #:

IPB015N08N5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 180A continuous drain current. Housed in a TO263-7 (D2PAK-7) package.
✓ Total Stock: 2,580 pcs
$ Price Range: $3.63 - $7.37

IPB015N08N5ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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2,580 pcs
2580 pcs On Request 1 On Request On Request On Request On Request On Request

IPB015N08N5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB015N08N5ATMA1 Description

Short technical summary and product information.

The IPB015N08N5ATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 5 family. It is designed for high-frequency switching applications and synchronous rectification in DC/DC converters. Key specifications include a drain-source voltage (VDS) of 80V, continuous drain current (ID) of 180A, and a very low on-resistance (RDS(on)) of 1.5 mOhm maximum. The device is 100% avalanche tested and features an optimized gate charge x RDS(on) figure of merit (FOM). It is housed in a PG-TO263-7 (D2PAK-7) package with a standard pinout: drain on tab and pin 4, gate on pin 1, source on pins 2,3,5,6,7. The MOSFET is RoHS compliant and halogen-free per IEC 61249-2-21, qualified according to JEDEC standards. Typical applications include high-efficiency power supplies, server and telecom DC/DC converters, and motor drives.

IPB015N08N5ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: N-Channel MOSFET, 80V Drain-Source Voltage, 180A Drain Current, TO263-7 Package
Subcategory: Single MOSFET

IPB015N08N5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant
Lead Free: Yes

IPB015N08N5ATMA1 Estimated Pricing

Qty Low High
1+ $7.37 $7.37
10+ $5.21 $5.21
100+ $3.97 $3.97
500+ $3.85 $3.85
1,000+ $3.63 $3.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB015N08N5ATMA1 Features

  • N-channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 180A.
  • Ultra-low on-resistance of 1.5 mOhm maximum.
  • OptiMOS 5 technology for high efficiency.
  • RoHS compliant and halogen-free.

IPB015N08N5ATMA1 Applications

  • Used in high-frequency DC/DC converters.
  • Ideal for synchronous rectification circuits.
  • Suitable for server and telecom power supplies.
  • Applied in motor drive systems.

IPB015N08N5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPB015N08N5ATMA1?

80V.

What package is the IPB015N08N5ATMA1 available in?

TO263-7 (PG-TO263-7) package.

Is the IPB015N08N5ATMA1 RoHS compliant?

Yes, it is RoHS compliant and halogen-free.

What is the continuous drain current rating?

180A.

What is the typical on-resistance?

Maximum on-resistance is 1.5 mOhm.

What technology is used in this MOSFET?

Infineon OptiMOS 5 technology.

What is the gate charge of the IPB015N08N5ATMA1?

Total gate charge QG(0V..10V) is 178 nC.

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