| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPB015N08N5 is a high-performance N-channel MOSFET from the OptiMOS 5 series. It is rated for a drain-source voltage (VDS) of 80V and features a very low on-resistance (RDS(on)) of 1.5 mΩ at a gate-source voltage (VGS) of 10V and a drain current (ID) of 80A. This optimized technology makes it ideal for high-frequency switching applications and DC/DC converters.
The MOSFET is designed for efficient operation, with excellent gate charge x RDS(on) product (FOM). It is 100% avalanche tested for reliability. The part is supplied in a PG-TO263-7 package suitable for surface mounting.
Key electrical parameters include a continuous drain current of up to 260A at 25°C case temperature and 199A at 100°C case temperature. It also has a high pulsed drain current capability of 1040A and an avalanche energy rating of 1230 mJ. The operating temperature range is from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The maximum on-resistance is 1.5 mΩ at VGS=10 V and ID=80 A.
The continuous drain current is 260A at 25°C case temperature and 199A at 100°C case temperature.
It is supplied in a PG-TO263-7 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.