| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Single Pulse) | |
| Continuous Drain Current (TC = 25 °C) | |
| Current | |
| Diode Continuous Forward Current | |
| Drain Current (Nominal @ Tc = 25 °C) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Resistance | |
| Gate plateau voltage | |
| Gate-Source Leakage Current | |
| Gate-to-Drain Charge | |
| Gate-to-Source Charge | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Output Charge | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance (Junction-Ambient) (Maximum @ 6 cm² cooling area) | |
| Thermal Resistance (Junction-Ambient) (Maximum @ minimal footprint) | |
| Thermal Resistance Junction-Case | |
| Transconductance | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current | |
| drain_source_on_resistance (Typical/Maximum @ Id=100 A, Vgs=10 V) | |
| gate_source_voltage_max (Maximum) | |
| gate_threshold_voltage (Minimum/Typical/Maximum @ Id=143 µA, Vds=Vgs) | |
| input_capacitance (Typical/Maximum @ Vds=30 V, Vgs=0 V, f=1 MHz) |
The IPB014N06NATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS family. It is designed for high-efficiency power conversion applications, particularly synchronous rectification. The device features a drain-source voltage rating of 60V and a continuous drain current of 180A (Tc=25°C) with a pulsed current capability of 720A. The maximum on-resistance is an ultra-low 1.4mOhm at Vgs=10V and Id=100A, enabling minimal conduction losses.
Gate charge characteristics include a total gate charge of 106nC (max) at 10V, with a gate-to-drain charge of 19nC typical. Input capacitance is 7800pF typical at Vds=30V. The device is avalanche rated with a single pulse avalanche energy of 420mJ. Operating junction temperature ranges from -55°C to 175°C, with maximum power dissipation of 214W at Tc=25°C.
The MOSFET is housed in a surface-mount TO-263-7 (D²Pak with 6 leads + tab) package, designated as PG-TO263-7. It is halogen-free per IEC61249-2-21 and has Pb-free lead plating. The device is 100% avalanche tested and qualified per JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.15 | $6.15 |
| 10+ | $4.09 | $4.09 |
| 100+ | $2.96 | $2.96 |
| 500+ | $2.68 | $2.68 |
| 1,000+ | $2.55 | $2.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-263-7 (D²Pak with 6 leads + tab).
-55°C to 175°C (junction temperature).
Yes, RoHS3 Compliant per existing data (unverified).
1.4 mOhm at Vgs=10V, Id=100A.
106 nC max at Vgs=10V.
180A at Tc=25°C with Vgs=10V.