| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,377 pcs
|
5377 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
5,082 pcs
|
5082 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,577 pcs
|
1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style |
The Infineon IPB014N06N is an N-channel MOSFET belonging to the OptiMOSTM power-transistor family. It is specifically optimized for synchronous rectification applications, offering superior thermal resistance and 100% avalanche testing.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a maximum continuous drain current of 180A at 25°C case temperature. The device features a low on-state resistance, with a typical value of 1.2mΩ at 100A and 10V gate-source voltage. Dynamic characteristics such as input capacitance (Ciss) are typically 7800pF, and output capacitance (Coss) is typically 1800pF.
This MOSFET is housed in a TO-263-7 package, suitable for surface mounting. It operates within a temperature range of -55°C to 175°C. The component is Pb-free and Halogen-free, complying with RoHS and IEC61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 2.8V.
The maximum continuous drain current is 180A.
The typical on-state resistance is 1.2mΩ.
The package type is TO-263-7.
The operating and storage temperature range is -55°C to 175°C.
Yes, it is RoHS3 Compliant.