| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Infineon IPB011N04NG is an N-channel OptiMOS3 power MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage of 40V and a low on-resistance (RDS(on) Max) of 1.1mΩ, ensuring efficient power transfer.
With a maximum power dissipation of 250W, this MOSFET is suitable for demanding applications. It operates within a wide temperature range, from -55°C to 175°C. The component has an input capacitance of 16nF and exhibits rise and fall times of 10ns and 13ns, respectively, indicating good switching performance.
Packaged in a TO-263 case, the IPB011N04NG is designed for surface mounting. Its specifications make it a robust choice for power management circuits and other applications requiring reliable switching and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the IPB011N04NG is 40V.
The maximum on-resistance (RDS(on)) for the IPB011N04NG is 1.1mΩ.
The maximum power dissipation for the IPB011N04NG is 250W.
The operating temperature range for the IPB011N04NG is -55°C to 175°C.
The IPB011N04NG is supplied in a TO-263 package.
The IPB011N04NG is designed for surface mounting.