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IPAW60R180P7S The Infineon IPAW60R180P7S is a 650V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses in a TO220 FullPAK package.
Mfr Part #:

IPAW60R180P7S

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPAW60R180P7S is a 650V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses in a TO220 FullPAK package.
✓ Total Stock: 2,264 pcs

IPAW60R180P7S Available from 1 distributor

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2,264 pcs
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IPAW60R180P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPAW60R180P7S Description

Short technical summary and product information.

The Infineon IPAW60R180P7S is a 600V CoolMOS P7 series power MOSFET, utilizing Infineon's 7th generation superjunction technology. This device is designed for high-voltage applications, offering a balance of performance and ease of use.

 

Key electrical specifications include a maximum drain-source breakdown voltage of 650V and a maximum on-resistance of 180mΩ. The typical gate charge is 25nC, and it features a pulsed drain current capability of 53A. The energy loss (Eoss) at 400V is 2.9 µJ, and the body diode exhibits a diF/dt rating of 900 A/µs. The MOSFET also boasts excellent ESD robustness exceeding 2kV (HBM).

 

This power MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, as well as PWM stages. Potential applications include PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, and telecom equipment. The device is housed in a PG-TO220 FullPAK Wide Creepage package, designed for efficient thermal management and increased power density.

IPAW60R180P7S Quick Information

Product Type: Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon CoolMOS P7 Series Power MOSFET
Subcategory: Power MOSFET

IPAW60R180P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPAW60R180P7S Features

  • 650V drain-source breakdown voltage.
  • 180mΩ maximum on-resistance.
  • 25nC typical gate charge.
  • PG-TO220 FullPAK Wide Creepage package.
  • Excellent ESD robustness >2kV.

IPAW60R180P7S Applications

  • Suitable for PFC stages.
  • Used in hard switching PWM stages.
  • Applicable for resonant switching stages.
  • Ideal for adapters and power supplies.
  • Designed for server and telecom applications.

IPAW60R180P7S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage?

650V.

What is the package type?

PG-TO220 FullPAK Wide Creepage.

What is the maximum on-resistance?

180mΩ.

What is the typical gate charge?

25nC.

What is the pulsed drain current rating?

53A.

What is the ESD robustness?

>2kV (HBM).

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