| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
334 pcs
|
334 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IPA95R450P7 is a high-performance N-channel power MOSFET from the 950V CoolMOS P7 series. This device sets a new benchmark in super junction technologies, combining best-in-class performance with ease of use.
Key electrical specifications include a maximum drain-source voltage (Vds) of 950V and a maximum on-resistance (Rds(on)) of 0.45Ω. The typical gate charge (Qg) is 35nC, and the output capacitance (Eoss) at 500V is 2.9µJ. The typical gate-source threshold voltage (Vgs(th)) is 3V, with a small variation of ±0.5V.
This MOSFET is housed in a PG-TO 220 FullPAK package, suitable for through-hole mounting. It features integrated Zener diode ESD protection, contributing to better production yield by reducing ESD-related failures.
Potential applications include flyback topologies for LED lighting, low-power chargers and adapters, smart meters, auxiliary power supplies, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications. The device is fully qualified according to JEDEC for industrial applications.
950V
PG-TO 220 FullPAK
0.45Ω maximum
35nC typical
14A
2.9µJ
3V typical