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IPA90R1K2C3 The Infineon IPA90R1K2C3 is an N-Channel Power MOSFET designed for high-performance applications. It offers a 900V drain-source voltage and 5.1A continuous drain current.
Mfr Part #:

IPA90R1K2C3

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA90R1K2C3 is an N-Channel Power MOSFET designed for high-performance applications. It offers a 900V drain-source voltage and 5.1A continuous drain current.
✓ Total Stock: 17,311 pcs
$ Price Range: $2.40

IPA90R1K2C3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
14,730 pcs
On Request
14730 pcs On Request 1 On Request On Request 1727+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,581 pcs
On Request
2581 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPA90R1K2C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Lead Style
Mounting Type
Operating Temperature Range
Power Dissipation
Storage Temperature
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IPA90R1K2C3 Description

Short technical summary and product information.

The Infineon IPA90R1K2C3 is a CoolMOSTM Power Transistor featuring an N-Channel MOSFET configuration. It is designed for applications requiring high voltage and current handling capabilities.

 

Key electrical specifications include a maximum drain-source voltage of 900V and a continuous drain current of 5.1A. The on-resistance is rated at 1.2 Ohms at a gate-source voltage of 10V. The device also boasts a typical gate charge of 28nC and a threshold voltage of 3V.

 

This MOSFET operates within an extended temperature range of -55°C to +150°C and has a power dissipation of 31W. It is housed in a TO-220 package suitable for through-hole mounting.

 

The IPA90R1K2C3 is qualified according to JEDEC standards for target applications and features Pb-free lead plating, making it RoHS compliant.

IPA90R1K2C3 Quick Information

Product Type: Power MOSFET
Series: CoolMOS C3
Canonical Name: Infineon IPA90R1K2C3 N-Channel Power MOSFET
Subcategory: N-Channel

IPA90R1K2C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA90R1K2C3 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA90R1K2C3 Features

  • 900V drain-source voltage capability.
  • 5.1A continuous drain current.
  • Low 1.2 Ohm on-resistance.
  • Ultra low gate charge.
  • TO-220 package for through-hole mounting.

IPA90R1K2C3 Applications

  • Suitable for high voltage applications.
  • Designed for power switching circuits.
  • Used in demanding electronic systems.
  • Robust dv/dt rated performance.

IPA90R1K2C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

900 volts.

What package type does this component use?

TO-220 through-hole.

What is the operating temperature range?

-55°C to +150°C.

What is the continuous drain current rating?

5.1 amperes.

What is the typical gate charge value?

28 nanocoulombs.

What is the maximum gate-source voltage limit?

20 volts.

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