| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Package / Case |
The Infineon IPA80R450P7 is a high-performance N-channel power MOSFET from the 800V CoolMOS P7 series. This device sets a new benchmark in 800V super junction technologies, combining best-in-class performance with ease of use.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 800V and a maximum On-Resistance (Rds(on)) of 0.45Ω. The typical Gate Charge (Qg) is 24nC, and the typical Gate Threshold Voltage (Vgs(th)) is 3V. It also features integrated ESD protection.
This MOSFET is designed for hard and soft switching flyback topologies and is recommended for applications such as LED lighting, low power chargers and adapters, audio, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer applications and solar inverters.
The IPA80R450P7 comes in a PG-TO 220 FullPAK package, designed for through-hole mounting.
800V.
PG-TO 220 FullPAK.
0.45Ω.
11A.
24nC.
2.7µJ.
Class 2 (HBM).