| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
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The IPA80R280P7XKSA1 is an 800V N-Channel MOSFET from Infineon's CoolMOS P7 series, designed for high-efficiency power conversion in hard and soft switching topologies.
Key electrical specifications include a drain-source voltage of 800V, continuous drain current of 17A, maximum on-resistance of 280mOhm at 10V gate drive, typical gate charge of 36nC, and input capacitance of 1200pF at 500V. An integrated Zener diode provides ESD protection (HBM class 2).
This MOSFET is recommended for flyback converters in LED lighting, low power chargers and adapters, audio, auxiliary power, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications.
The device is housed in a TO-220 FullPAK package (PG-TO220-3-31) with through-hole mounting. It operates over a junction temperature range of -55°C to 150°C and is fully qualified per JEDEC for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.25 | $4.25 |
| 10+ | $2.17 | $2.17 |
| 100+ | $1.97 | $1.97 |
| 500+ | $1.60 | $1.60 |
| 1,000+ | $1.54 | $1.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220 FullPAK (PG-TO220-3-31).
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified).
36 nC at 10V.
280mOhm at 7.2A, 10V.