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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPA80R1K4P7 is an N-Channel enhancement mode MOSFET from Infineon Technologies' CoolMOS P7 series. It is designed for high-voltage applications with a maximum drain-source voltage of 800V and continuous drain current of 4A at Tc. The device features a typical gate threshold voltage of 3V and a maximum on-resistance of 1.4 Ohm at 1.4A and 10V gate drive.
This MOSFET utilizes super junction technology to achieve low gate charge (10 nC typical) and low input capacitance (250 pF at 500V), enabling efficient switching in hard and soft switching topologies. It includes an integrated Zener diode for ESD protection (Class 2 HBM) and is fully qualified according to JEDEC for industrial applications.
The device is housed in a PG-TO220-3-31 Full Pack package (TO-220-3 Full Pack) with through-hole mounting. It is suitable for applications such as LED lighting, low power chargers and adapters, audio, auxiliary power, and industrial power supplies, as well as PFC stages in consumer and solar applications.
800V.
TO-220-3 Full Pack (PG-TO220-3-31 Full Pack).
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 compliant.
10 nC at Vgs=10V.
Class 2 (HBM).
1.4 Ohm at 1.4A and 10V.