| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,190 pcs
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2190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| SVHC Present |
The Infineon Technologies IPA70R360P7S is a 700V N-channel power MOSFET belonging to the CoolMOS P7 technology platform. This device is designed for high voltage applications and offers a balance of performance and cost-effectiveness.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 700V, a maximum On-Resistance (RDS(on)) of 0.36 Ohms, and a typical Gate Charge (Qg) of 16.4 nC. It also features a pulsed drain current (ID,pulse) of 34A and output capacitance (Eoss) of 1.8 µJ at 400V.
The IPA70R360P7S is packaged in a PG-TO 220 FullPAK, suitable for through-hole mounting. Its design incorporates an integrated ESD protection diode, providing high ESD ruggedness. This MOSFET is validated according to JEDEC standards and is recommended for flyback topologies in applications such as chargers, adapters, and lighting.
The CoolMOS P7 technology enables high efficiency standards and supports high power density, facilitating slim designs. Benefits include extremely low losses due to low FOM (RDS(on)*Qg and RDS(on)*Eoss), excellent thermal behavior, and low switching losses.
The maximum Drain-Source Voltage (Vds) at Tj=25°C is 700V.
The maximum On-Resistance (RDS(on)) is 0.36 Ohms.
The typical Gate Charge (Qg) is 16.4 nC.
This MOSFET is supplied in the PG-TO 220 FullPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.