IPA70R360P7S The Infineon Technologies IPA70R360P7S is a 700V N-channel MOSFET from the CoolMOS P7 series. It offers low losses and excellent thermal behavior.
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IPA70R360P7S

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPA70R360P7S is a 700V N-channel MOSFET from the CoolMOS P7 series. It offers low losses and excellent thermal behavior.
✓ Total Stock: 2,190 pcs

IPA70R360P7S Available from 1 distributor

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IPA70R360P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Halogen Free
Industrial Grade
Medical Grade
Military Grade
SVHC Present

IPA70R360P7S Description

Short technical summary and product information.

The Infineon Technologies IPA70R360P7S is a 700V N-channel power MOSFET belonging to the CoolMOS P7 technology platform. This device is designed for high voltage applications and offers a balance of performance and cost-effectiveness.

 

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 700V, a maximum On-Resistance (RDS(on)) of 0.36 Ohms, and a typical Gate Charge (Qg) of 16.4 nC. It also features a pulsed drain current (ID,pulse) of 34A and output capacitance (Eoss) of 1.8 µJ at 400V.

 

The IPA70R360P7S is packaged in a PG-TO 220 FullPAK, suitable for through-hole mounting. Its design incorporates an integrated ESD protection diode, providing high ESD ruggedness. This MOSFET is validated according to JEDEC standards and is recommended for flyback topologies in applications such as chargers, adapters, and lighting.

 

The CoolMOS P7 technology enables high efficiency standards and supports high power density, facilitating slim designs. Benefits include extremely low losses due to low FOM (RDS(on)*Qg and RDS(on)*Eoss), excellent thermal behavior, and low switching losses.

IPA70R360P7S Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon Technologies IPA70R360P7S N-channel Power MOSFET
Subcategory: N-Channel

IPA70R360P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPA70R360P7S Features

  • 700V Drain-Source Voltage rating.
  • 0.36 Ohm maximum On-Resistance.
  • 16.4 nC typical Gate Charge.
  • Integrated ESD protection diode.
  • PG-TO 220 FullPAK package.

IPA70R360P7S Applications

  • Suitable for charger applications.
  • Used in adapter power supplies.
  • Applicable for lighting systems.
  • Recommended for flyback topologies.

IPA70R360P7S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPA70R360P7S?

The maximum Drain-Source Voltage (Vds) at Tj=25°C is 700V.

What is the maximum On-Resistance of the IPA70R360P7S MOSFET?

The maximum On-Resistance (RDS(on)) is 0.36 Ohms.

What is the typical Gate Charge for this Infineon MOSFET?

The typical Gate Charge (Qg) is 16.4 nC.

What package type is the IPA70R360P7S supplied in?

This MOSFET is supplied in the PG-TO 220 FullPAK package.

What is the RoHS status of the IPA70R360P7S?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPA70R360P7S?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Does the IPA70R360P7S have REACH compliance?

The REACH status is REACH Unaffected.

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