| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
62,333 pcs
|
62333 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
21,480 pcs
|
21480 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Industrial Grade | |
| Lead Spacing | |
| Mounting Type |
The Infineon IPA65R650CE is a high-voltage power MOSFET utilizing CoolMOS CE technology, designed for price-performance optimized applications in consumer and lighting markets. This transistor offers extremely low losses due to very low FOM (Rdson*Qg) and Eoss. It features a maximum Drain-Source Voltage of 700V and a maximum On-Resistance of 650mΩ. The typical Gate Charge is 23nC, with a pulsed drain current capability of 18A.
This MOSFET is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages found in PC Silverboxes, adapters, LCD & PDP TVs, and lighting systems. It is packaged in a TO-220 FullPAK with through-hole mounting. The device is Pb-free plated and uses a halogen-free mold compound, qualified for consumer-grade applications according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) at Tj,max for the IPA65R650CE is 700V.
The maximum On-Resistance (RDS(on)) for the IPA65R650CE is 650mΩ.
The typical Gate Charge (Qg) for the IPA65R650CE is 23nC.
The IPA65R650CE is supplied in a TO-220-3 Full Pack package.
The RoHS status for the IPA65R650CE is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IPA65R650CE is 1 Unlimited.
The REACH status for the IPA65R650CE is listed as REACH Unaffected.