IPA65R600E6 The IPA65R600E6 is a 650V N-Channel CoolMOS E6 power MOSFET from Infineon Technologies. It features 7.3A continuous drain current and 600mOhm maximum on-resistance.
Mfr Part #:

IPA65R600E6

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPA65R600E6 is a 650V N-Channel CoolMOS E6 power MOSFET from Infineon Technologies. It features 7.3A continuous drain current and 600mOhm maximum on-resistance.
✓ Total Stock: 840 pcs
$ Price Range: $0.73 - $2.48

IPA65R600E6 Available from 1 distributor

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✓ Non-Authorised
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840 pcs
840 pcs On Request 1 On Request On Request 14+ On Request On Request

IPA65R600E6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA65R600E6 Description

Short technical summary and product information.

The IPA65R600E6 is a 650V N-Channel enhancement mode power MOSFET from Infineon's CoolMOS E6 series. It utilizes superjunction technology to achieve low conduction and switching losses. The device is designed for hard switching and resonant switching applications such as PFC stages, adapters, and server power supplies.

 

Key electrical specifications include a maximum drain-source voltage of 650V (700V at Tj max), continuous drain current of 7.3A at Tc, and pulsed drain current of 18A. The maximum on-resistance is 600mOhm at Vgs=10V and Id=2.1A. Typical gate charge is 23nC at 10V, and input capacitance is 440pF at Vds=100V. The device also features a body diode with high commutation ruggedness up to 500A/µs.

 

The IPA65R600E6 is offered in a TO-220 Full Pack package (PG-TO220-3-111) with through-hole mounting. It is Pb-free plated and uses halogen-free mold compound. The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 28W at Tc.

IPA65R600E6 Quick Information

Product Type: Power MOSFET
Series: CoolMOS E6
Canonical Name: Infineon IPA65R600E6 CoolMOS E6 Power Transistor
Subcategory: Power MOSFET

IPA65R600E6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPA65R600E6 Estimated Pricing

Qty Low High
1+ $2.48 $2.48
10+ $2.06 $2.06
100+ $1.08 $1.08
500+ $0.80 $0.80
2,500+ $0.77 $0.77
5,000+ $0.73 $0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA65R600E6 Features

  • 650V drain-source voltage with 700V at Tj max.
  • 7.3A continuous drain current at Tc.
  • 600mOhm maximum on-resistance at 10V gate drive.
  • 23nC typical gate charge for low switching losses.
  • TO-220 Full Pack package for through-hole mounting.

IPA65R600E6 Applications

  • Used in PFC stages for power supplies.
  • Suitable for hard switching PWM converters.
  • Ideal for resonant switching applications.
  • Applied in server and telecom power systems.

IPA65R600E6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPA65R600E6?

The maximum drain-source voltage is 650V, with a maximum of 700V at Tj max.

What package does the IPA65R600E6 come in?

It comes in a TO-220 Full Pack package (PG-TO220-3-111) for through-hole mounting.

What is the operating temperature range of the IPA65R600E6?

The operating junction temperature range is -55°C to 150°C.

Is the IPA65R600E6 RoHS compliant?

Yes, it is RoHS3 compliant and features Pb-free plating and halogen-free mold compound.

What is the maximum on-resistance of the IPA65R600E6?

The maximum on-resistance is 600mOhm at Vgs=10V and Id=2.1A.

What is the continuous drain current rating?

The continuous drain current is 7.3A at Tc.

What is the gate charge of the IPA65R600E6?

The typical gate charge is 23nC at Vgs=10V.

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