| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 1844+ | On Request | On Request | |
|
1,216 pcs
|
1216 pcs | On Request | 1 | On Request | On Request | 1647+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Mounting Type | |
| Operating Temperature | |
| Technology |
The Infineon IPA65R420CFD is an N-Channel MOSFET from the CoolMOS™ CFD2 series, designed for high-performance applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8.7A at 25°C.
With a maximum on-resistance (Rds On) of 420mOhm at 3.4A and 10V, and a gate threshold voltage (Vgs(th)) of 4.5V at 300µA, this MOSFET offers efficient switching characteristics. The input capacitance (Ciss) is 870pF at 100V, and the gate charge (Qg) is 31.5nC at 10V.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 31.2W (Tc). It is packaged in a TO-220-3 Full Pack configuration and is designed for through-hole mounting.
The IPA65R420CFD is built using Metal Oxide Semiconductor technology and comes in standard tube packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current (Id) at 25°C is 8.7A.
The maximum on-resistance (Rds On) is 420mOhm at 3.4A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-220-3 Full Pack package.
This MOSFET is designed for through-hole mounting.
The RoHS status is RoHS3 Compliant.