| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
298 pcs
|
298 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPA65R420CFD is a 650V N-Channel MOSFET manufactured by Infineon Technologies, part of the CoolMOS family. It utilizes MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.
Key electrical specifications include a maximum drain-to-source voltage of 650V, continuous drain current of 8.7A at 25°C case temperature, and a maximum on-resistance of 420mOhm at 3.4A and 10V gate drive. The device features a total gate charge of 31.5nC at 10V and input capacitance of 870pF at 100V drain-source voltage.
The MOSFET is housed in a TO-220-3 Full Pack package (supplier device package PG-TO220-3-111) with through-hole mounting. It can dissipate up to 31.2W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. The maximum gate-source voltage is ±20V, and the threshold voltage is 4.5V at 300µA drain current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The continuous drain current (Id) is 8.7A at Tc = 25°C.
It comes in a TO-220-3 Full Pack package (supplier device package PG-TO220-3-111).
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The maximum Rds(on) is 420mOhm at Id = 3.4A and Vgs = 10V.
The maximum gate threshold voltage (Vgs(th)) is 4.5V at Id = 300µA.