| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,449 pcs
|
10449 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,628 pcs
|
1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Power Dissipation |
The Infineon IPA65R400CE is an N-channel MOSFET designed for power applications. It features a maximum drain-source voltage of 650V and a continuous drain current of 15.1A at 25°C. The on-resistance (Rds(on)) is rated at 400mOhm at 10V Vgs and 3.2A.
This MOSFET has a maximum power dissipation of 31W at 25°C. The gate threshold voltage (Vgs(th)) is 3.5V at 320uA. The component is housed in a TO-220FP package, suitable for through-hole mounting.
Infineon is a recognized manufacturer in the semiconductor industry, and the IPA65R400CE is part of their MOSFET offerings. This component is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 650V.
The continuous drain current (Id) at 25°C is 15.1A.
The Rds(on) is 400mOhm when measured at 10V Vgs and 3.2A.
The maximum power dissipation (Pd) at 25°C is 31W.
It is an N-channel MOSFET.
The IPA65R400CE is supplied in a TO-220FP package.