| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
866 pcs
|
866 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
339 pcs
|
339 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free |
The Infineon IPA65R1K5CE is a high-voltage power MOSFET utilizing Infineon's CoolMOS CE technology. This technology is optimized for price-performance in consumer and lighting markets, meeting high efficiency standards.
Key electrical specifications include a maximum Drain-Source Voltage of 700V, a maximum On-Resistance of 1500 mΩ, and a continuous Drain Current of 5.2A. The typical Gate Charge is 10.5 nC, and the pulsed Drain Current is 8.3A. The output capacitance (Eoss) at 400V is 1.15 µJ.
This transistor is designed for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages. It is packaged in a PG-TO 220 FullPAK, suitable for through-hole mounting.
The IPA65R1K5CE features extremely low losses due to a very low FOM (Rdson*Qg) and Eoss. It also offers very high commutation ruggedness and is easy to use and drive. The component is Pb-free plated with a halogen-free mold compound.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) at Tj,max is 700V.
The maximum On-Resistance (RDS(on)) is 1500 mΩ.
The continuous drain current (Id.) is 5.2A.
The typical gate charge (Qg.typ) is 10.5 nC.
The IPA65R1K5CE is supplied in a PG-TO 220 FullPAK package.
Yes, the IPA65R1K5CE is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.