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IPA65R190C7 The Infineon IPA65R190C7 is a 650V N-channel power MOSFET from the CoolMOS C7 series. It offers a maximum on-resistance of 190 mΩ and a typical gate charge of 23 nC.
Mfr Part #:

IPA65R190C7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA65R190C7 is a 650V N-channel power MOSFET from the CoolMOS C7 series. It offers a maximum on-resistance of 190 mΩ and a typical gate charge of 23 nC.
✓ Total Stock: 9,350 pcs

IPA65R190C7 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
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9,350 pcs
On Request
9350 pcs On Request 1 On Request On Request 13+ On Request On Request
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IPA65R190C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type
Package / Case
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IPA65R190C7 Description

Short technical summary and product information.

The Infineon IPA65R190C7 is a high-voltage N-channel power MOSFET belonging to the CoolMOS C7 technology family. Designed for high-performance applications, this device features a breakdown voltage of 650V and a maximum on-resistance of 190 mΩ. Its typical gate charge is 23 nC, contributing to efficient switching characteristics.

 

This MOSFET is built on Infineon's superjunction (SJ) principle, offering benefits such as improved efficiency, reduced gate charge, and enhanced reliability. The IPA65R190C7 is suitable for applications like PFC stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar power systems.

 

The device comes in a PG-TO220 FullPAK package, designed for through-hole mounting. It is Pb-free plated and uses a halogen-free mold compound, aligning with environmental compliance standards.

IPA65R190C7 Quick Information

Product Type: N-Channel Power MOSFET
Series: CoolMOS C7
Canonical Name: Infineon IPA65R190C7 CoolMOS C7 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPA65R190C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: true

IPA65R190C7 Features

  • 650V breakdown voltage rating.
  • 190 mΩ maximum on-resistance.
  • 23 nC typical gate charge.
  • PG-TO220 FullPAK package.
  • Pb-free and halogen-free materials.

IPA65R190C7 Applications

  • Used in PFC power stages.
  • Suitable for PWM power stages.
  • Applications in computing systems.
  • Designed for server power supplies.
  • Utilized in telecom equipment.

IPA65R190C7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPA65R190C7?

The maximum drain-source voltage (VDS) at Tj,max is 700 V.

What is the maximum on-resistance of the IPA65R190C7 MOSFET?

The maximum on-resistance (RDS(on)) is 190 mΩ.

What is the typical gate charge for the IPA65R190C7?

The typical gate charge (Qg) is 23 nC.

What package type is the IPA65R190C7 supplied in?

The IPA65R190C7 is supplied in a PG-TO220 FullPAK package.

Is the IPA65R190C7 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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