| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,220 pcs
|
3220 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 2129+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The Infineon IPA65R110CFD is an N-channel power MOSFET belonging to the CoolMOS™ family. It is designed for applications requiring high voltage handling capabilities, with a breakdown voltage of up to 650V.
This MOSFET is packaged in a TO-220-3 configuration, making it suitable for through-hole mounting on printed circuit boards. Its robust design and electrical characteristics make it a reliable choice for various power conversion and switching applications.
Key specifications include a 650V breakdown voltage, indicating its suitability for high-voltage environments. The through-hole mounting type simplifies integration into existing designs and facilitates thermal management.
This component is part of Infineon's extensive portfolio of power semiconductors, offering efficiency and performance for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Vds) is 650 V.
The IPA65R110CFD is available in a TO-220-3 package.
The IPA65R110CFD is designed for through-hole mounting.