| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,370 pcs
|
2370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPA60R600P7XKSA1 is a 600V N-Channel enhancement mode power MOSFET from Infineon Technologies' CoolMOS P7 series. It is designed for high efficiency switching applications using the superjunction (SJ) principle.
This device features a drain-source voltage rating of 600V (650V at Tj,max), continuous drain current of 6A at Tc, and a maximum on-resistance of 600mOhm at Vgs=10V. Its gate charge is 9nC typical, and input capacitance is 363pF.
The CoolMOS P7 platform offers excellent commutation ruggedness, low switching losses, and ESD robustness >2kV. It is suitable for both hard and soft switching topologies including PFC and LLC converters.
The device is housed in a through-hole TO-220-3 Full Pack package (PG-TO220-FP), with an operating junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.14 | $2.14 |
| 10+ | $1.22 | $1.22 |
| 100+ | $0.91 | $0.91 |
| 500+ | $0.73 | $0.73 |
| 1,000+ | $0.61 | $0.61 |
| 2,500+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 600V, with a maximum of 650V at Tj,max.
This device is available in a TO-220-3 Full Pack through-hole package (PG-TO220-FP).
The junction temperature range is -55°C to 150°C.
The component is listed as RoHS3 compliant, but this is unverified.
Maximum on-resistance is 600mOhm at Vgs=10V and Id=1.7A.
Typical gate charge is 9nC at Vgs=10V.
ESD robustness is >2kV (HBM).