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3,340 pcs
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3340 pcs | On Request | 1 | On Request | On Request | 1811+ | On Request | On Request | |
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1,012 pcs
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1012 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The IPA60R600P7S is a 650V N-Channel MOSFET manufactured by Infineon Technologies. It belongs to the CoolMOS P7 series, designed for high efficiency power conversion applications.
The device features a maximum drain-source voltage (Vds) of 650V at maximum junction temperature. This high voltage rating makes it suitable for applications requiring robust off-state blocking capability.
CoolMOS P7 technology offers low switching losses and improved efficiency in power supply topologies such as flyback, PFC, and LLC converters. The part is housed in a standard through-hole package suitable for automated assembly.
Engineers should consider this MOSFET for designs where high voltage operation and low conduction losses are critical. The device is optimized for hard-switching and resonant converter topologies.
The maximum drain-source voltage (Vds) is 650V at maximum junction temperature.