| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,978 pcs
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8978 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPA60R600E6 is an N-channel power MOSFET manufactured by Infineon Technologies. This MOSFET features a drain-source breakdown voltage of 600V and a continuous drain current rating of 7.3A at case temperature (Tc). It has a maximum on-resistance of 600mOhm at 2.4A drain current and 10V gate drive.
The device has a maximum gate charge of 20.5nC at Vgs = 10V and an input capacitance of 440pF at Vds = 100V. The gate threshold voltage is 3.5V maximum at 200µA drain current, and the maximum gate-source voltage is ±20V.
This MOSFET comes in a TO-220-3 Full Pack package with a supplier device package designation of PG-TO220-3-111. It uses through-hole mounting and is suitable for through-hole PCB assembly. The maximum power dissipation is 28W at case temperature, and the operating junction temperature ranges from -55°C to 150°C.
The drain-source breakdown voltage is 600V.
The maximum continuous drain current is 7.3A at case temperature (Tc).
The maximum on-resistance is 600mOhm at 2.4A drain current and 10V gate-source voltage.
It comes in a TO-220-3 Full Pack package (PG-TO220-3-111) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
It is reported as RoHS3 Compliant but this is unverified.