Mfr Part #:

IPA60R360P7SXKSA1

Infineon IPA60R360P7SXKSA1 is a 600V, 9A N-Channel MOSFET. It features a low on-resistance of 360mOhm and is designed for high-efficiency switching applications.

✓ Total Stock: 1,520 pcs

$ Price Range: $0.55 - $2.11

IPA60R360P7SXKSA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,520 pcs On Request	1520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPA60R360P7SXKSA1 Description

Short technical summary and product information.

The IPA60R360P7SXKSA1 is an N-Channel enhancement mode MOSFET from Infineon's CoolMOS P7 superjunction technology platform. It is rated for a drain-source voltage of 600V (650V at maximum junction temperature) and a continuous drain current of 9A at 25°C case temperature. The device offers a typical on-resistance of 360mOhm at Vgs=10V and a low gate charge of 13nC, enabling efficient switching.

This MOSFET is designed for both hard and soft switching topologies, including PFC and LLC converters. It features excellent body diode commutation ruggedness (900A/µs) and ESD robustness exceeding 2kV (HBM), simplifying design-in and improving reliability. The integrated ESD diode and low ringing tendency contribute to ease of use.

The IPA60R360P7SXKSA1 is housed in a TO-220-3 Full Pack (PG-TO220-FP) package with through-hole mounting. It is qualified according to JEDEC standards and is suitable for applications such as PC power supplies, adapters, LCD/PDP TVs, lighting, servers, telecom, and UPS systems.

IPA60R360P7SXKSA1 Quick Information

Product Type: N-Channel MOSFET

Series: CoolMOS P7

Canonical Name: IPA60R360P7SXKSA1

Subcategory: Single MOSFET

IPA60R360P7SXKSA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPA60R360P7SXKSA1 Estimated Pricing

Qty	Low	High
1+	$2.11	$2.11
10+	$1.32	$1.32
100+	$0.87	$0.87
500+	$0.69	$0.69
1,000+	$0.61	$0.61
2,500+	$0.55	$0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R360P7SXKSA1 Features

600V drain-source voltage rating.
9A continuous drain current at 25°C.
360mOhm typical on-resistance.
Low gate charge of 13nC.
ESD robust >2kV HBM.

IPA60R360P7SXKSA1 Applications

Ideal for PFC stages in power supplies.
Suitable for LLC resonant converters.
Used in server and telecom power systems.
Applicable in lighting and adapter designs.

IPA60R360P7SXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPA60R360P7SXKSA1?

The drain-source voltage is 600V (650V at maximum junction temperature).

What package is the IPA60R360P7SXKSA1 available in?

TO-220-3 Full Pack (PG-TO220-FP).

What is the operating temperature range?

-40°C to 150°C (junction temperature).

Is the IPA60R360P7SXKSA1 RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the typical gate charge?

13 nC at Vgs = 10V.

What is the maximum on-resistance?

360 mOhm at Id = 2.7A, Vgs = 10V.

What is the ESD robustness?

Greater than 2 kV (HBM).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	555 pF
Junction Temperature	150°C
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-40°C ~ 150°C (TJ)
Power Dissipation (Max)	22 W
Rds On (Max) @ Id, Vgs	360 mOhm
Storage Temperature	-40.0°C ~ 150.0°C
Supplier Device Package	PG-TO220-FP
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V