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IPA60R280P7S The Infineon IPA60R280P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for efficient power conversion.
Mfr Part #:

IPA60R280P7S

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R280P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for efficient power conversion.
✓ Total Stock: 5,360 pcs

IPA60R280P7S Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,340 pcs
On Request
3340 pcs On Request 1 On Request On Request 18+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,630 pcs
On Request
1630 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
390 pcs
On Request
390 pcs On Request 1 On Request On Request 1850+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPA60R280P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Lead Spacing
Lead Style
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Storage Temperature
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IPA60R280P7S Description

Short technical summary and product information.

The Infineon IPA60R280P7S is a 600V N-channel power MOSFET from the CoolMOS P7 platform, designed for high-voltage applications. This 7th generation technology utilizes the superjunction principle to combine fast switching speeds with excellent ease of use, including low ringing tendency and outstanding body diode robustness.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 280mΩ, and a typical Gate Charge (Qg) of 18nC. It also features a pulse drain current (Id,pulse) of 36A and an energy loss (Eoss) of 2.1µJ at 400V. The device exhibits excellent ESD robustness greater than 2kV (HBM).

 

Packaged in a PG-TO 220 FP through-hole package, the IPA60R280P7S is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages. Its design facilitates simplified thermal management due to low switching and conduction losses, enabling increased power density solutions.

 

This power MOSFET is qualified according to JEDEC Standard and is designed for applications including PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS.

IPA60R280P7S Quick Information

Product Type: N-channel Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPA60R280P7S N-channel Power MOSFET
Subcategory: N-Channel

IPA60R280P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R280P7S Features

  • 650V maximum Drain-Source Voltage.
  • 280mΩ maximum On-Resistance.
  • 36A pulsed Drain Current.
  • Excellent ESD robustness >2kV.
  • CoolMOS P7 technology for efficiency.

IPA60R280P7S Applications

  • Suitable for PFC stages.
  • Used in hard-switching PWM stages.
  • Applicable to resonant switching stages.
  • Ideal for adapters and TVs.
  • Designed for server and telecom.

IPA60R280P7S FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPA60R280P7S?

The maximum Drain-Source Voltage (Vds) for the IPA60R280P7S is 650V.

What is the maximum On-Resistance of the IPA60R280P7S?

The maximum On-Resistance (Rds(on)) of the IPA60R280P7S is 280 mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) for the IPA60R280P7S is 18 nC.

What is the package type for the IPA60R280P7S?

The IPA60R280P7S is supplied in a PG-TO 220 FP package.

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