Mfr Part #:

IPA60R199CP

Mfr Name: Infineon

The Infineon IPA60R199CP is a CoolMOS N-channel power MOSFET designed for hard switching SMPS topologies. It offers a 600V breakdown voltage and a low on-state resistance.

✓ Total Stock: 2,268 pcs

$ Price Range: $2.40

IPA60R199CP Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	268 pcs On Request	268 pcs	On Request	1	On Request	On Request	13+	On Request	On Request

IPA60R199CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Halogen Free	Yes
Lead Spacing	2.54 mm
Lead Style	Through Hole
Mounting Type	Through Hole
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C

View Similar Products (0)

IPA60R199CP Description

Short technical summary and product information.

The Infineon IPA60R199CP is a high-performance CoolMOS N-channel power MOSFET. It is specifically designed for hard switching Switched-Mode Power Supply (SMPS) topologies, offering a balance of low on-state resistance and efficient switching characteristics.

Key electrical specifications include a Drain-Source Breakdown Voltage (V(BR)DSS) of 600V and a maximum Drain-Source On-State Resistance (R DS(on)) of 0.199 Ω at 25°C. The device features a typical gate charge (Q g) of 32 nC and a typical continuous drain current (I D) of 16A at 25°C.

Packaged in a standard PG-TO220 package, this MOSFET is suitable for through-hole mounting. It operates within a wide temperature range from -55°C to 150°C.

The IPA60R199CP is qualified according to JEDEC standards for target applications and is Pb-free, RoHS compliant.

IPA60R199CP Quick Information

Product Type: Power MOSFET

Series: CoolMOS CP

Canonical Name: Infineon IPA60R199CP CoolMOS Power Transistor

Subcategory: N-Channel Power MOSFET

IPA60R199CP Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: true

IPA60R199CP Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R199CP Features

600V Drain-Source Breakdown Voltage.
0.199 Ohm maximum R DS(on) at 25°C.
16A maximum continuous drain current.
32 nC typical total gate charge.
PG-TO220 package for through-hole mounting.

IPA60R199CP Applications

Designed for hard switching SMPS.
Suitable for power supply applications.
High peak current capability.
Extreme dv/dt rated.

IPA60R199CP FAQs

7 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the IPA60R199CP?

The Drain-Source Breakdown Voltage (V(BR)DSS) is 600V.

What is the typical on-state resistance of the IPA60R199CP?

The typical Drain-Source On-State Resistance (R DS(on)) is 0.199 Ω at 25°C.

What is the maximum continuous drain current?

The maximum continuous drain current (I D) is 16A at 25°C.

What is the typical gate charge for this MOSFET?

The typical total gate charge (Q g) is 32 nC.

What package type is the IPA60R199CP supplied in?

The IPA60R199CP is supplied in a PG-TO220 package.

What is the RoHS status of the IPA60R199CP?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.