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IPA60R190C6XKSA1 N-Channel 600V 20.2A MOSFET from Infineon's CoolMOS C6 series. Features 190mOhm maximum on-resistance and 63nC gate charge.
Mfr Part #:

IPA60R190C6XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V 20.2A MOSFET from Infineon's CoolMOS C6 series. Features 190mOhm maximum on-resistance and 63nC gate charge.
Total Stock: 2,520 pcs
$ Price Range: $1.39 - $3.95

IPA60R190C6XKSA1 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,520 pcs
2520 pcs On Request 1 On Request On Request On Request On Request On Request

IPA60R190C6XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Body Diode di/dt
Current
Drain to Source Voltage (Vdss)
Drain-Source Voltage (Max @ Tj,max)
Drive Voltage (Max Rds On, Min Rds On)
Eoss @ 400V
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package Type
Power Dissipation (Max)
Pulsed Drain Current (Idm)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA60R190C6XKSA1 Description

Short technical summary and product information.

The IPA60R190C6XKSA1 is a 600V N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS C6 superjunction family. It is rated for a continuous drain current of 20.2A at Tc and a pulsed drain current of 59A. The maximum drain-source on-resistance is 190mOhm at Vgs = 10V and Id = 9.5A. The gate charge is 63nC at Vgs = 10V, and the input capacitance is 1400pF at Vds = 100V. The device is designed for high-efficiency switching applications including power factor correction (PFC) stages, hard switching PWM converters, and resonant switching converters. It is housed in a through-hole TO-220-3 Full Pack package (PG-TO220-FP) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 34W at Tc. The body diode offers a high di/dt of 500 A/µs. The MOSFET is Pb-free and halogen free, and is RoHS3 compliant (unverified).

IPA60R190C6XKSA1 Quick Information

Product Type: N-Channel MOSFET
Series: C6
Canonical Name: Infineon Technologies IPA60R190C6XKSA1 N-Channel 600V 20.2A MOSFET, TO-220 Full Pack
Subcategory: N-Channel Power MOSFET

IPA60R190C6XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-free

IPA60R190C6XKSA1 Estimated Pricing

Qty Low High
1+ $3.95 $3.95
10+ $2.00 $2.00
100+ $1.81 $1.81
500+ $1.47 $1.47
1,000+ $1.39 $1.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R190C6XKSA1 Features

  • 600V N-Channel superjunction MOSFET.
  • 190mOhm maximum on-resistance at 10V.
  • 20.2A continuous drain current rating.
  • 63nC typical gate charge for low losses.
  • TO-220 Full Pack through-hole package.

IPA60R190C6XKSA1 Applications

  • Power factor correction (PFC) stages.
  • Hard switching PWM converters.
  • Resonant switching converters.
  • Server and telecom power supplies.

IPA60R190C6XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The nominal drain-source voltage is 600V, with a maximum of 650V at Tj,max.

What is the continuous drain current?

The continuous drain current is 20.2A at Tc.

What is the package type?

The package is TO-220-3 Full Pack (PG-TO220-FP).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this part RoHS compliant?

Yes, it is marked as RoHS3 compliant, but the compliance data is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3.5V at Id = 630µA.

What is the maximum power dissipation?

The maximum power dissipation is 34W at Tc.

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