IPA60R190C6 POWER FIELD-EFFECT TRANSISTOR, 2
Mfr Part #:

IPA60R190C6

Mfr Name: Infineon Technologies
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
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IPA60R190C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA60R190C6 Description

Short technical summary and product information.
POWER FIELD-EFFECT TRANSISTOR, 2

IPA60R190C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R190C6 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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IPA60R190E6
IPA60R190E6
Infineon Technologies
The IPA60R190E6 is a 600V N-Channel MOSFET from Infineon Technologies. It features 190mΩ maximum on-resistance, 20.2A drain current, and a TO-220-3 Full Pack package.
View Part
SP000797380
SP000797380
Infineon Technologies
IPA60R190E6XKSA1 - POWER FIELD-E
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