IPA60R180P7SXKSA1 N-Channel 600V MOSFET with 18A continuous drain current and 180mOhm on-resistance. Housed in a TO-220 Full Pack through-hole package.
Mfr Part #:

IPA60R180P7SXKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V MOSFET with 18A continuous drain current and 180mOhm on-resistance. Housed in a TO-220 Full Pack through-hole package.
✓ Total Stock: 1,520 pcs
$ Price Range: $0.76 - $2.51

IPA60R180P7SXKSA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,520 pcs
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IPA60R180P7SXKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA60R180P7SXKSA1 Description

Short technical summary and product information.

The IPA60R180P7SXKSA1 is an N-Channel power MOSFET from Infineon Technologies, built on the CoolMOS P7 superjunction platform. This 600V device features a maximum drain-source voltage of 600V (650V at Tj,max) and a continuous drain current of 18A at Tc, with a pulsed drain current rating of 53A.

 

Key electrical characteristics include a maximum on-resistance of 180mOhm at Vgs=10V, a typical gate charge of 25nC, and an input capacitance of 1081pF at Vds=400V. The device offers good switching performance and ESD robustness above 2kV (HBM), making it suitable for power conversion circuits.

 

The MOSFET is packaged in a TO-220-3 Full Pack (PG-TO220-FP) through-hole package, providing easy mounting and thermal management. It operates over a junction temperature range of -40°C to 150°C, with a maximum power dissipation of 26W at Tc.

 

Typical applications include PFC stages, hard-switching PWM stages, and resonant switching stages such as LLC converters in power supplies for PCs, adapters, TVs, lighting, servers, telecom equipment, and UPS systems.

IPA60R180P7SXKSA1 Quick Information

Product Type: Power MOSFET
Series: P7
Canonical Name: 600V N-Channel CoolMOS P7 Power MOSFET
Subcategory: Power MOSFET

IPA60R180P7SXKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R180P7SXKSA1 Estimated Pricing

Qty Low High
1+ $2.51 $2.51
10+ $1.23 $1.23
100+ $1.03 $1.03
500+ $0.84 $0.84
1,000+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R180P7SXKSA1 Features

  • N-Channel 600V superjunction power MOSFET.
  • Maximum on-resistance of 180 milliohms.
  • Continuous drain current rated at 18A.
  • ESD robustness exceeds 2kV HBM.
  • Through-hole TO-220 Full Pack package.

IPA60R180P7SXKSA1 Applications

  • Used in PFC boost converter stages.
  • Suitable for hard switching PWM applications.
  • Ideal for resonant LLC converter designs.
  • Supports server, telecom, and UPS power supplies.

IPA60R180P7SXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPA60R180P7SXKSA1?

The maximum drain-source voltage is 600V, with 650V rated at Tj,max.

What is the continuous drain current rating?

The continuous drain current is 18A at Tc.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 180mOhm at Vgs=10V and Id=5.6A.

What is the gate charge of the IPA60R180P7SXKSA1?

The typical gate charge is 25nC at Vgs=10V.

What is the operating temperature range?

The junction temperature range is -40°C to 150°C.

What package does this device come in?

It is available in a TO-220-3 Full Pack (PG-TO220-FP) through-hole package.

Is the IPA60R180P7SXKSA1 RoHS compliant?

The part is listed as RoHS3 compliant, though this status is unverified.

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