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IPA60R180P7 The Infineon IPA60R180P7 is a 600V CoolMOS P7 N-channel power MOSFET. It features a maximum Rds(on) of 180mΩ and a typical gate charge of 25nC.
Mfr Part #:

IPA60R180P7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R180P7 is a 600V CoolMOS P7 N-channel power MOSFET. It features a maximum Rds(on) of 180mΩ and a typical gate charge of 25nC.
✓ Total Stock: 1,600 pcs

IPA60R180P7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,480 pcs
On Request
1480 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
120 pcs
On Request
120 pcs On Request 1 On Request On Request 1731+ On Request On Request
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IPA60R180P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge
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IPA60R180P7 Description

Short technical summary and product information.

The Infineon IPA60R180P7 is a 600V CoolMOS P7 series N-channel power MOSFET. This device is designed using the superjunction principle, offering a balance of fast switching performance with ease of use. It exhibits very low ringing tendency and outstanding robustness of its body diode against hard commutation.

 

Key electrical specifications include a maximum drain-source voltage of 650V, a maximum on-resistance of 180mΩ, and a typical gate charge of 25nC. The pulsed drain current is rated at 53A, with an energy loss (Eoss) of 2.9µJ at 400V. The body diode has a diF/dt rating of 900 A/µs.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, due to its commutation ruggedness. It offers significant reductions in switching and conduction losses, contributing to more efficient, compact, and cooler switching applications. The device boasts excellent ESD robustness greater than 2kV (HBM).

 

The IPA60R180P7 is supplied in a PG-TO 220 FP package and is fully qualified according to JEDEC for Industrial Applications. Its design facilitates ease of use and fast design-in, with simplified thermal management.

IPA60R180P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPA60R180P7 600V CoolMOS P7 N-channel Power MOSFET
Subcategory: N-Channel

IPA60R180P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R180P7 Features

  • 600V CoolMOS P7 N-channel power MOSFET.
  • Maximum Rds(on) of 180mΩ.
  • Typical gate charge of 25nC.
  • 650V drain-source voltage rating.
  • PG-TO 220 FP package for through-hole mounting.

IPA60R180P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in hard and soft switching.
  • Enables efficient power conversion.
  • Designed for industrial applications.

IPA60R180P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPA60R180P7?

The maximum drain-source voltage (VDS) at Tj,max is 650V.

What is the maximum on-resistance of the IPA60R180P7?

The maximum on-resistance (RDS(on)) is 180mΩ.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 25nC.

What package type is the IPA60R180P7 supplied in?

The IPA60R180P7 is supplied in a PG-TO 220 FP package.

What is the RoHS status of the IPA60R180P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for the IPA60R180P7?

The REACH status is REACH Unaffected.

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