| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | 1752+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies IPA60R180C7 is a 600V N-Channel MOSFET from the CoolMOS C7 series, utilizing superjunction technology. It features a drain-source breakdown voltage of 600V (650V at maximum junction temperature) and a continuous drain current rating of 9A at case temperature (Tc) or 22A when junction temperature is below 150°C. The maximum drain-source on-resistance is 180mΩ at 5.3A drain current and 10V gate drive. Typical gate charge is 24nC at 10V. The MOSFET is characterized by low gate charge and output capacitance energy (2.7µJ at 400V), enabling efficient switching in hard and soft switching topologies such as PFC and LLC converters. It offers high dv/dt ruggedness (120V/ns) and a body diode with fast di/dt (350A/µs). The maximum power dissipation is 29W at case temperature, and the operating junction temperature range is -55°C to 150°C. The device is housed in a TO-220-3 Full Pack package (PG-TO220-3-111) with through-hole mounting. This fully isolated package simplifies heat sink mounting. The device is RoHS3 compliant and REACH unaffected, with a moisture sensitivity level of 1.
600V (650V at maximum junction temperature).
TO-220-3 Full Pack (PG-TO220-3-111).
-55°C to 150°C (junction temperature).
It is listed as RoHS3 compliant, but this status is unverified.
9A at case temperature, 22A when junction temperature is below 150°C.
180mOhm maximum at 5.3A drain current and 10V gate drive.
24nC at 10V gate voltage.