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IPA60R170CFD7 The Infineon IPA60R170CFD7 is a 650V N-channel power MOSFET from the CoolMOS CFD7 series. It offers a low on-resistance of 170 mΩ and a typical gate charge of 28 nC.
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IPA60R170CFD7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R170CFD7 is a 650V N-channel power MOSFET from the CoolMOS CFD7 series. It offers a low on-resistance of 170 mΩ and a typical gate charge of 28 nC.
✓ Total Stock: 1,096 pcs

IPA60R170CFD7 Available from 1 distributor

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IPA60R170CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
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SVHC Present
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IPA60R170CFD7 Description

Short technical summary and product information.

The Infineon IPA60R170CFD7 is a high-performance N-channel power MOSFET utilizing Infineon's CoolMOS CFD7 technology. This device is designed for high voltage applications, featuring a maximum Drain-Source Voltage (Vds) of 650V and a maximum on-resistance (Rds(on)) of 170 mΩ. Its typical gate charge (Qg) is 28 nC, contributing to efficient switching.

 

The CoolMOS CFD7 technology is optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC topologies. Key features include an ultra-fast body diode, best-in-class reverse recovery charge (Qrr), and improved MOSFET reverse diode ruggedness. These characteristics enable higher efficiency and reliability in resonant topologies.

 

This MOSFET is supplied in a PG-TO 220 FullPAK package, suitable for through-hole mounting. The IPA60R170CFD7 is fully qualified according to JEDEC standards for industrial applications, making it a robust choice for demanding power designs.

 

Potential applications include server power supplies, telecom equipment, and EV charging systems where high efficiency and power density are critical.

IPA60R170CFD7 Quick Information

Product Type: MOSFET
Series: CoolMOS CFD7
Canonical Name: IPA60R170CFD7 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPA60R170CFD7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R170CFD7 Features

  • 650V Drain-Source Voltage rating.
  • 170 mΩ maximum on-resistance.
  • 28 nC typical gate charge.
  • Ultra-fast body diode included.
  • PG-TO 220 FullPAK package.

IPA60R170CFD7 Applications

  • Optimized for soft-switching topologies.
  • Suitable for phase-shift full-bridge (ZVS).
  • Ideal for LLC resonant converters.
  • Used in server power supplies.
  • Applicable to EV charging systems.

IPA60R170CFD7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IPA60R170CFD7?

650V maximum at Tj,max.

What is the package type of the IPA60R170CFD7?

PG-TO 220 FullPAK (through hole mounting).

What is the maximum on-resistance (Rds(on))?

170mΩ maximum.

What is the typical gate charge (Qg)?

28nC typical.

What is the pulsed drain current rating?

51A.

What is the body diode diF/dt capability?

1300A/µs.

What is the output capacitance energy (Eoss) at 400V?

3.2µJ.

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