IPA60R165CP N-Channel MOSFET from Infineon Technologies with 600V drain-source voltage and 21A continuous drain current. Features low on-resistance of 165mOhm and is housed in a TO-220-3 Full Pack package.
Mfr Part #:

IPA60R165CP

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 600V drain-source voltage and 21A continuous drain current. Features low on-resistance of 165mOhm and is housed in a TO-220-3 Full Pack package.
✓ Total Stock: 5,737 pcs
$ Price Range: $2.01 - $5.67

IPA60R165CP Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,737 pcs
5737 pcs On Request 1 On Request On Request 1340+ On Request On Request

IPA60R165CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA60R165CP Description

Short technical summary and product information.

The IPA60R165CP is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 600V and a continuous drain current of 21A at case temperature. The device features a low on-resistance of 165mOhm maximum at Vgs=10V and Id=12A, enabling efficient power conversion.

 

The gate charge is 52nC maximum at 10V, and input capacitance is 2000pF at 100V, making it suitable for medium-frequency switching. The threshold voltage is 3.5V maximum at 790µA drain current. The device can dissipate up to 34W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The IPA60R165CP is offered in a through-hole TO-220-3 Full Pack package with a PG-TO220 Full Pack supplier device package. Mounting type is through hole, compatible with standard TO-220 PCB footprints. The device is listed as RoHS3 compliant and has an MSL of 1 (unlimited).

IPA60R165CP Quick Information

Product Type: N-Channel MOSFET
Series: CoolMOS CP
Canonical Name: Infineon Technologies IPA60R165CP N-Channel MOSFET, 600V, 21A, TO-220-3 Full Pack
Subcategory: Single MOSFET

IPA60R165CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R165CP Estimated Pricing

Qty Low High
1+ $5.67 $5.67
10+ $3.72 $3.72
100+ $2.78 $2.78
500+ $2.32 $2.32
1,000+ $2.06 $2.06
2,500+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R165CP Features

  • 600V maximum drain-to-source voltage.
  • 21A continuous drain current at case temperature.
  • Low on-resistance of 165mOhm.
  • Through-hole TO-220-3 Full Pack package.
  • RoHS3 compliant.

IPA60R165CP Applications

  • Used in switch-mode power supplies.
  • Suitable for power factor correction circuits.
  • Ideal for high-voltage DC-DC converters.
  • Applicable in motor control drives.

IPA60R165CP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IPA60R165CP?

600V.

What is the package type of the IPA60R165CP?

TO-220-3 Full Pack (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the IPA60R165CP RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the continuous drain current rating?

21A at case temperature.

What is the typical on-resistance?

165mOhm maximum at Vgs=10V, Id=12A.

What is the gate charge?

52nC maximum at Vgs=10V.

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