| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPA60R125P6 is a 600V N-Channel enhancement-mode MOSFET from Infineon's CoolMOS P6 series. It features a superjunction structure that provides extremely low switching and conduction losses, making it suitable for high-efficiency power conversion. The device is rated for a maximum drain-source voltage of 600V (650V at Tj,max) and a continuous drain current of 30A at Tc. The maximum drain-source on-resistance is 125mΩ at a gate-source voltage of 10V and a drain current of 11.6A.
The gate charge is 56nC (typical) at Vgs=10V, and the input capacitance is 2660pF at Vds=100V. The body diode exhibits a high maximum di/dt of 300A/µs, indicating robust commutation capability. The device is designed for industrial-grade applications and is qualified according to JEDEC standards.
This MOSFET is housed in a TO-220-3 FullPAK package (PG-TO220-3-111) with through-hole mounting. The FullPAK configuration provides electrical isolation from the heatsink, simplifying mounting. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 34W at Tc.
Applications include power factor correction (PFC) stages, hard switching PWM stages, and resonant switching stages in PC silverboxes, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.95 | $4.95 |
| 10+ | $3.25 | $3.25 |
| 100+ | $2.42 | $2.42 |
| 500+ | $2.02 | $2.02 |
| 1,000+ | $1.87 | $1.87 |
| 2,500+ | $1.77 | $1.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 600V, with a rating of 650V at maximum junction temperature (Tj,max).
The continuous drain current is 30A at case temperature (Tc). The pulsed drain current is 87A.
The maximum on-resistance is 125mΩ at a drain current of 11.6A with a gate-source voltage of 10V.
The gate charge (Qg) is 56nC typical at Vgs=10V.
The junction operating temperature range is -55°C to 150°C.
The device is available in a TO-220-3 Full Pack (PG-TO220-3-111) package with through-hole mounting.
The part is listed as RoHS3 Compliant, and the datasheet indicates Pb-free plating and halogen-free mold compound.