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IPA60R120P7 The Infineon IPA60R120P7 is a 650V N-channel Power MOSFET from the CoolMOS P7 series. It offers low switching and conduction losses, making it suitable for various power applications.
Mfr Part #:

IPA60R120P7

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R120P7 is a 650V N-channel Power MOSFET from the CoolMOS P7 series. It offers low switching and conduction losses, making it suitable for various power applications.
✓ Total Stock: 21,729 pcs
$ Price Range: $3.20

IPA60R120P7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
10,491 pcs
On Request
10491 pcs On Request 1 On Request On Request 18+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,500 pcs
On Request
9500 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,738 pcs
On Request
1738 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPA60R120P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Medical Grade
Military Grade
Mounting Type
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IPA60R120P7 Description

Short technical summary and product information.

The Infineon IPA60R120P7 is a 650V N-channel Power MOSFET utilizing Infineon's 7th generation CoolMOS P7 technology. This superjunction MOSFET is designed for high-voltage power applications, offering a balance of performance and ease of use.

 

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 120mΩ, and a typical Gate Charge (Qg) of 36nC. The device also features a pulsed drain current (Id,pulse) of 78A and energy loss (Eoss) of 4.0µJ at 400V. The integrated body diode exhibits robust commutation ruggedness.

 

This MOSFET is suitable for both hard and soft switching applications, including PFC and LLC stages, as well as PWM stages. Its benefits include reduced switching and conduction losses, leading to more efficient, compact, and cooler power designs. The device is supplied in a PG-TO 220 FullPAK package suitable for through-hole mounting.

 

The IPA60R120P7 is fully qualified according to JEDEC for Industrial Applications, providing excellent ESD robustness greater than 2kV (HBM).

IPA60R120P7 Quick Information

Product Type: Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPA60R120P7 N-channel Power MOSFET
Subcategory: N-Channel

IPA60R120P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R120P7 Estimated Pricing

Qty Low High
1+ $3.20 $3.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R120P7 Features

  • 650V Drain-Source Voltage rating.
  • 120mΩ maximum On-Resistance.
  • 36nC typical Gate Charge.
  • CoolMOS P7 technology for efficiency.
  • PG-TO 220 FullPAK package.

IPA60R120P7 Applications

  • Suitable for PFC stages.
  • Used in hard switching PWM stages.
  • Applicable for resonant switching stages.
  • Ideal for server power supplies.
  • Used in telecom power systems.

IPA60R120P7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IPA60R120P7?

The maximum drain-source voltage (Vds) of the IPA60R120P7 is 650V.

What is the package type of the IPA60R120P7?

The IPA60R120P7 is packaged in PG-TO 220 FullPAK.

What is the pulsed drain current (Id,pulse) of the device?

The pulsed drain current (Id,pulse) is 78A.

What is the gate charge (Qg) of the IPA60R120P7?

The gate charge (Qg) is 36nC.

What is the body diode di/dt maximum value?

The body diode di/dt maximum is 900A/µs.

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