| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPA60R099P6 is a high-voltage N-channel power MOSFET from the CoolMOS P6 series, designed using superjunction technology. This transistor offers significant benefits for power management applications, including extremely low switching and conduction losses, leading to more efficient, compact, lighter, and cooler systems.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V at Tj,max, a maximum On-Resistance (Rds(on)) of 99 mΩ, and a typical Gate Charge (Qg) of 70 nC. It also features a pulsed drain current (ID,pulse) of 109A and an energy loss (Eoss) of 8.8 µJ at 400V. The body diode has a di/dt rating of 300 A/µs.
This MOSFET is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages found in PC Silverboxes, adapters, TVs, lighting, servers, and UPS systems. It is provided in a TO-220 package suitable for through-hole mounting.
The IPA60R099P6 is Pb-free plating and halogen-free mold compound, qualified for industrial-grade applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) at Tj,max for the IPA60R099P6 is 650V.
The maximum On-Resistance (Rds(on)) for the IPA60R099P6 is 99 mΩ.
The typical Gate Charge (Qg) for the IPA60R099P6 is 70 nC.
The IPA60R099P6 is supplied in a PG-TO 220 package.
The IPA60R099P6 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IPA60R099P6 is 1 Unlimited.
The IPA60R099P6 is listed as REACH Unaffected.