| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,282 pcs
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2282 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Infineon IPA60R099C7 is a 600V N-channel Power MOSFET utilizing the CoolMOS C7 technology. This device is designed for high voltage power applications and offers a maximum on-resistance of 99mΩ and a typical gate charge of 42nC.
Key features include suitability for hard and soft switching, increased MOSFET dv/dt ruggedness to 120V/ns, and best-in-class FOM for efficiency. The IPA60R099C7 is designed to enable higher system efficiency by lowering switching losses and allows for higher switching frequencies.
This MOSFET is packaged in a PG-TO 220 FullPAK and is suitable for applications such as server, telecom, and solar power supplies. It is fully qualified according to JEDEC for Industrial Applications.
The drain-source voltage (Vds) maximum rating is 650V at maximum junction temperature.
It is available in a PG-TO 220 FullPAK through-hole package.
The typical gate charge (Qg) is 42 nC.
The maximum on-resistance (Rds(on)) is 99 mΩ.
The continuous drain current is 36 A maximum at Tj<150°C.
The pulsed drain current is 83 A maximum.
The MOSFET dv/dt ruggedness is minimum 120 V/ns.