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IPA60R060P7XKSA1 The IPA60R060P7XKSA1 is an N-Channel MOSFET from Infineon Technologies with a drain-source voltage of 600V and continuous drain current of 48A. It features a low on-resistance of 60mOhm and is housed in a TO-220 Full Pack package.
Mfr Part #:

IPA60R060P7XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPA60R060P7XKSA1 is an N-Channel MOSFET from Infineon Technologies with a drain-source voltage of 600V and continuous drain current of 48A. It features a low on-resistance of 60mOhm and is housed in a TO-220 Full Pack package.
Total Stock: 5,020 pcs
$ Price Range: $2.82 - $6.68

IPA60R060P7XKSA1 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,020 pcs
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IPA60R060P7XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Body Diode diF/dt
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Output Capacitance Stored Energy (EOSS) @ 400V
Power Dissipation (Max)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
drain_to_source_voltage (Maximum @ Tj,max)

IPA60R060P7XKSA1 Description

Short technical summary and product information.

The IPA60R060P7XKSA1 is a 600V N-Channel power MOSFET from Infineon's CoolMOS P7 series. It utilizes superjunction technology to achieve low conduction and switching losses. Key specifications include a continuous drain current of 48A at case temperature, a maximum on-resistance of 60mOhm at 10V gate drive, and a typical gate charge of 67nC. The device is designed for both hard and soft switching applications such as PFC and LLC converters. It offers excellent body diode ruggedness with a commutation capability of 900A/µs. The MOSFET is housed in a through-hole TO-220 Full Pack package (PG-TO220-FP) and is rated for operation from -55°C to 150°C junction temperature. It is suitable for applications in power supplies, adapters, lighting, servers, and telecom equipment.

IPA60R060P7XKSA1 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon Technologies IPA60R060P7XKSA1 N-Channel 600V 48A MOSFET
Subcategory: Single MOSFET

IPA60R060P7XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R060P7XKSA1 Estimated Pricing

Qty Low High
1+ $6.68 $6.68
10+ $3.55 $3.55
100+ $3.24 $3.24
500+ $2.82 $2.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R060P7XKSA1 Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 48A.
  • Low on-resistance of 60mOhm typical.
  • CoolMOS P7 superjunction technology.
  • Through-hole TO-220 Full Pack package.

IPA60R060P7XKSA1 Applications

  • Suitable for PFC stages in power supplies.
  • Used in hard switching PWM converters.
  • Ideal for resonant switching LLC converters.
  • Applicable in server and telecom power systems.

IPA60R060P7XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPA60R060P7XKSA1?

The nominal drain-source voltage is 600V, with a maximum of 650V at Tj,max.

What is the continuous drain current?

The continuous drain current is 48A at case temperature (Tc).

What is the on-resistance (Rds(on))?

The maximum on-resistance is 60mOhm at Id=15.9A and Vgs=10V.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What package is this MOSFET available in?

It is available in a TO-220-3 Full Pack package (PG-TO220-FP).

Is the IPA60R060P7XKSA1 RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this is unverified.

What is the typical gate charge?

The typical total gate charge is 67nC at Vgs=10V.

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