| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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439 pcs
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439 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IPA60R060C7 is a high-performance N-channel Power MOSFET utilizing the revolutionary CoolMOS C7 technology. Designed for high voltage power applications, this device operates at up to 600V and features a maximum on-resistance of 60mΩ. Its continuous drain current capability is 54A at Tj<150°C, with a pulse current rating of 135A.
This MOSFET is suitable for hard and soft switching applications, including PFC and high-performance LLC stages in SMPS for computing, server, telecom, UPS, and solar systems. Key benefits include increased efficiency due to best-in-class FOM (RDS(on)*Eoss and RDS(on)*Qg), higher dv/dt ruggedness up to 120V/ns, and increased power density solutions.
The IPA60R060C7 comes in a PG-TO 220 FullPAK package, designed for through-hole mounting. It is fully qualified according to JEDEC for Industrial Applications, making it a reliable choice for demanding power designs.
The maximum drain-source voltage is 650V.
PG-TO 220 FullPAK through-hole package.
Maximum on-resistance is 60mΩ.
Typical gate charge is 68nC.
54A, specified at junction temperature below 150°C.
135A.
120V/ns.