IPA60R060C7 The Infineon IPA60R060C7 is a 600V N-channel Power MOSFET featuring CoolMOS C7 technology. It offers a low on-resistance of 60mΩ and a continuous drain current of 54A.
Mfr Part #:

IPA60R060C7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R060C7 is a 600V N-channel Power MOSFET featuring CoolMOS C7 technology. It offers a low on-resistance of 60mΩ and a continuous drain current of 54A.
✓ Total Stock: 439 pcs

IPA60R060C7 Available from 1 distributor

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IPA60R060C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Lead Spacing
Lead Style
Mounting Type
Storage Temperature

IPA60R060C7 Description

Short technical summary and product information.

The Infineon IPA60R060C7 is a high-performance N-channel Power MOSFET utilizing the revolutionary CoolMOS C7 technology. Designed for high voltage power applications, this device operates at up to 600V and features a maximum on-resistance of 60mΩ. Its continuous drain current capability is 54A at Tj<150°C, with a pulse current rating of 135A.

 

This MOSFET is suitable for hard and soft switching applications, including PFC and high-performance LLC stages in SMPS for computing, server, telecom, UPS, and solar systems. Key benefits include increased efficiency due to best-in-class FOM (RDS(on)*Eoss and RDS(on)*Qg), higher dv/dt ruggedness up to 120V/ns, and increased power density solutions.

 

The IPA60R060C7 comes in a PG-TO 220 FullPAK package, designed for through-hole mounting. It is fully qualified according to JEDEC for Industrial Applications, making it a reliable choice for demanding power designs.

IPA60R060C7 Quick Information

Product Type: N-channel Power MOSFET
Series: CoolMOS C7
Canonical Name: IPA60R060C7 N-channel Power MOSFET
Subcategory: N-Channel

IPA60R060C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R060C7 Features

  • 600V Drain-Source Voltage rating.
  • Low 60mΩ maximum on-resistance.
  • High 135A pulse drain current.
  • Suitable for hard and soft switching.
  • PG-TO 220 FullPAK package.

IPA60R060C7 Applications

  • Used in PFC and PWM stages.
  • Ideal for high-performance SMPS.
  • Suitable for server applications.
  • Designed for telecom power supplies.
  • Applicable in solar power systems.

IPA60R060C7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPA60R060C7?

The maximum drain-source voltage is 650V.

What package is the IPA60R060C7 available in?

PG-TO 220 FullPAK through-hole package.

What is the on-resistance of the IPA60R060C7?

Maximum on-resistance is 60mΩ.

What is the gate charge of the IPA60R060C7?

Typical gate charge is 68nC.

What is the continuous drain current rating?

54A, specified at junction temperature below 150°C.

What is the pulsed drain current rating?

135A.

What is the MOSFET dv/dt ruggedness?

120V/ns.

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