Mfr Part #:

IPA50R190CE

Mfr Name: Infineon

The Infineon IPA50R190CE is a 550V N-channel CoolMOS CE power MOSFET. It offers low on-resistance and high commutation ruggedness.

✓ Total Stock: 3,298 pcs

$ Price Range: $2.40

IPA50R190CE Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	3,121 pcs On Request	3121 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	177 pcs On Request	177 pcs	On Request	1	On Request	On Request	23+	On Request	On Request

IPA50R190CE Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	47.2 nC
Halogen Free	Halogen free mold compound
Mounting Type	Through Hole

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IPA50R190CE Description

Short technical summary and product information.

The Infineon IPA50R190CE is a 550V N-channel power MOSFET utilizing CoolMOS CE technology. This technology is designed for high voltage applications, offering a balance of performance and cost-effectiveness.

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 550V and a maximum On-Resistance (Rds(on)) of 0.19 Ohms. The continuous Drain Current (Id) is rated at 24.8A, with a pulsed drain current (Id,pulse) of 63A. The typical Gate Charge (Qg) is 47.2 nC, and the energy in output capacitance (Eoss) at 400V is 4.42 µJ.

This MOSFET is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages, commonly found in PC Silverbox, adapters, LCD & PDP TVs, and indoor lighting. It is supplied in a PG-TO 220 FullPAK package, designed for through-hole mounting.

The component features Pb-free plating and a halogen-free mold compound, aligning with environmental considerations.

IPA50R190CE Quick Information

Product Type: MOSFET

Series: CoolMOS CE

Canonical Name: IPA50R190CE N-channel Power MOSFET

Subcategory: Power MOSFET

IPA50R190CE Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free plating

IPA50R190CE Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA50R190CE Features

550V Drain-Source Voltage rating.
Low 0.19 Ohm maximum On-Resistance.
High 24.8A continuous Drain Current.
CoolMOS CE technology for efficiency.
TO-220 FullPAK package for through-hole mounting.

IPA50R190CE Applications

Used in PFC converter stages.
Suitable for hard-switching PWM stages.
Applicable for resonant switching stages.
Ideal for adapter power supplies.
Used in indoor lighting applications.

IPA50R190CE FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage for the IPA50R190CE?

The maximum Drain-Source Voltage (Vds) at Tj,max is 550 V.

What is the maximum On-Resistance of the IPA50R190CE MOSFET?

The maximum On-Resistance (Rds(on)) is 0.19 Ω.

What is the continuous Drain Current for the IPA50R190CE?

The continuous Drain Current (Id) is 24.8 A.

What is the typical Gate Charge of the IPA50R190CE?

The typical Gate Charge (Qg) is 47.2 nC.

What package type is the IPA50R190CE supplied in?

The IPA50R190CE is supplied in a PG-TO 220 FullPAK package.

Does the IPA50R190CE have Pb-free plating?

Yes, the IPA50R190CE features Pb-free plating.

Is the IPA50R190CE halogen-free?

Yes, the IPA50R190CE has a halogen-free mold compound.