IPA50R190CE The IPA50R190CE is a 500V N-Channel MOSFET from Infineon's CoolMOS CE series. It features a continuous drain current of 18.5A (24.8A at 25°C) and a low on-resistance of 190mOhm.
Mfr Part #:

IPA50R190CE

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPA50R190CE is a 500V N-Channel MOSFET from Infineon's CoolMOS CE series. It features a continuous drain current of 18.5A (24.8A at 25°C) and a low on-resistance of 190mOhm.
✓ Total Stock: 5,000 pcs

IPA50R190CE Available from 1 distributor

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IPA50R190CE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA50R190CE Description

Short technical summary and product information.

The IPA50R190CE is a high-voltage N-channel power MOSFET built on Infineon's CoolMOS CE superjunction technology. It is designed for cost-sensitive applications requiring high efficiency, such as consumer and lighting power supplies. Key electrical characteristics include a drain-source breakdown voltage of 500V (minimum 550V at high junction temperature), a continuous drain current of 18.5A (24.8A at Tc=25°C per datasheet), and a pulsed drain current rating of 63A. The typical gate charge is 47.2 nC, and the input capacitance is 1137 pF, enabling fast switching. The device is housed in a TO-220-3 Full Pack (PG-TO220-FP) through-hole package, which provides isolated mounting. It is Pb-free and halogen-free, and suitable for standard grade applications. Typical applications include PFC stages, hard switching and resonant PWM stages in adapters, LCD/PDP TVs, and indoor lighting.

IPA50R190CE Quick Information

Product Type: MOSFET
Series: CoolMOS
Canonical Name: IPA50R190CE CoolMOS CE 500V N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPA50R190CE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

IPA50R190CE Features

  • N-channel enhancement mode MOSFET.
  • 500V drain-source breakdown voltage (550V at Tj,max).
  • Low on-resistance of 190 mOhm at 6.2A.
  • Extremely low losses due to low FOM Rdson*Qg and Eoss.
  • Pb-free and halogen-free package.

IPA50R190CE Applications

  • PFC stages in power supplies.
  • Hard switching PWM stages.
  • Resonant switching stages for adapters.
  • LCD and PDP TV power systems.
  • Indoor lighting applications.

IPA50R190CE FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPA50R190CE?

The drain-source breakdown voltage is 500 V minimum, and 550 V minimum at Tj,max.

What is the package type of the IPA50R190CE?

The package is TO-220-3 Full Pack, also known as PG-TO220-FP, with through-hole mounting.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPA50R190CE RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this status is unverified. The datasheet confirms Pb-free plating (lead free) and halogen-free mold compound.

What is the typical gate charge of the IPA50R190CE?

The typical gate charge is 47.2 nC at Vgs = 10 V.

What is the continuous drain current rating?

The datasheet specifies a continuous drain current of 24.8 A at Tc = 25°C, while the database lists 18.5 A at Tc. The pulsed drain current is 63 A.

What is the on-resistance of the IPA50R190CE?

The maximum on-resistance is 190 mOhm at Id = 6.2 A and Vgs = 13 V.

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