| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,667 pcs
|
19667 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| SVHC Present |
The Infineon IPA180N10N3G is a high-performance N-channel MOSFET from the OptiMOS™3 series. This power transistor is designed for demanding applications, featuring an excellent gate charge x Rds(on) product (FOM) and very low on-resistance.
With an operating temperature range up to 175°C, the IPA180N10N3G is suitable for high-frequency switching and synchronous rectification applications. It is Pb-free and RoHS compliant, indicating adherence to environmental standards.
This MOSFET is qualified according to JEDEC standards for target applications, ensuring reliability and performance in various electronic systems. Its design focuses on efficiency and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IPA180N10N3G has a maximum operating temperature of 175°C.
The on-resistance is described as very low.
The gate charge x Rds(on) product is described as excellent.
Yes, it has Pb-free lead plating.