| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,600 pcs
|
14600 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
6,251 pcs
|
6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 1523+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPA083N10N5 is an N-channel Power MOSFET from the OptiMOS™5 family, designed for high-frequency switching applications. It offers a drain-source voltage (VDS) of 100V and a maximum on-resistance (RDS(on)) of 8.3 mΩ at a gate-source voltage of 10V and drain current of 44A.
This MOSFET boasts excellent gate charge x RDS(on) product (FOM) and very low on-resistance, making it ideal for applications requiring efficient power conversion. It is 100% avalanche tested and comes in a TO-220-FP package, suitable for through-hole mounting.
The device operates within a temperature range of -55°C to 175°C and is Pb-free and RoHS compliant, aligning with environmental standards. Its features make it a reliable choice for demanding power electronics designs.
100 V.
PG-TO220-FP through-hole package.
-55 to 175 °C.
8.3 mΩ at VGS = 10 V.
44 A at TC=25°C, 32 A at TC=100°C.
Yes, it is lead-free and halogen free.
30 nC typical.