| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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186 pcs
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186 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPA057N06N3G is an N-Channel enhancement-mode power MOSFET built with Infineon's advanced MOSFET technology. It is designed for high-efficiency power conversion and switching applications.
Key electrical ratings include a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 60A at case temperature. The device features a low typical on-resistance of 5.7mOhm at 10V gate drive, minimizing conduction losses. Gate charge is 82nC and input capacitance is 6600pF, enabling moderate-speed switching.
The MOSFET is housed in a through-hole TO-220-3 Full Pack package (supplier package PG-TO220-3-111), which provides electrical isolation between the tab and the heatsink. It is rated for operation over a junction temperature range of -55°C to 175°C.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 60A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 5.7mOhm at Id=60A and Vgs=10V.
It uses a through-hole TO-220-3 Full Pack package (supplier package PG-TO220-3-111).
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, though this is unverified.