IPA032N06N3 G Infineon IPA032N06N3 G is a 60V, 84A N-Channel Power MOSFET with low on-resistance of 3.2 mOhm max. It is designed for high-frequency switching and DC/DC converters.
Mfr Part #:

IPA032N06N3 G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPA032N06N3 G is a 60V, 84A N-Channel Power MOSFET with low on-resistance of 3.2 mOhm max. It is designed for high-frequency switching and DC/DC converters.
✓ Total Stock: 950 pcs
$ Price Range: $1.48 - $4.18

IPA032N06N3 G Available from 1 distributor

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950 pcs
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IPA032N06N3 G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IPA032N06N3 G Description

Short technical summary and product information.

The Infineon IPA032N06N3 G is an N-Channel Power MOSFET from the OptiMOS 3 family. It features a drain-source voltage of 60V and a continuous drain current of 84A at Tc=25°C. The device offers a very low on-resistance of 3.2 mOhm maximum at Vgs=10V, making it suitable for high-efficiency power conversion.

 

This MOSFET is optimized for high-frequency switching applications such as synchronous rectification and DC/DC converters. It exhibits excellent gate charge characteristics with a total gate charge of 165 nC maximum and low gate resistance of 1.3 Ohm typical. The device is 100% avalanche tested with a single pulse avalanche energy rating of 235 mJ.

 

The IPA032N06N3 G is housed in a TO-220-3 Full Pack package (PG-TO220-3-31) with through-hole mounting. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 41W at Tc=25°C. The device is RoHS compliant and halogen-free according to IEC61249-2-21.

IPA032N06N3 G Quick Information

Product Type: Power MOSFET
Series: 3
Canonical Name: Infineon IPA032N06N3 G OptiMOS 3 N-Channel Power MOSFET
Subcategory: Single MOSFET

IPA032N06N3 G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPA032N06N3 G Estimated Pricing

Qty Low High
1+ $4.18 $4.18
10+ $2.74 $2.74
100+ $2.04 $2.04
500+ $1.59 $1.59
1,000+ $1.57 $1.57
2,500+ $1.51 $1.51
5,000+ $1.48 $1.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA032N06N3 G Features

  • 60V drain-source breakdown voltage.
  • 84A continuous drain current rating.
  • Low on-resistance of 3.2 mOhm max.
  • Optimized for high-frequency switching.
  • RoHS compliant and halogen-free.

IPA032N06N3 G Applications

  • Ideal for DC/DC converter designs.
  • Used in synchronous rectification circuits.
  • Suitable for high-frequency power switching.
  • Applicable in automotive power systems.

IPA032N06N3 G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPA032N06N3 G?

The drain-source breakdown voltage is 60V.

What package is the IPA032N06N3 G available in?

It is available in a TO-220-3 Full Pack package (PG-TO220-3-31).

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the IPA032N06N3 G RoHS compliant?

Yes, it is RoHS compliant and halogen-free according to IEC61249-2-21.

What is the maximum on-resistance of the IPA032N06N3 G?

The maximum drain-source on-resistance is 3.2 mOhm at Vgs=10V and Id=80A.

What is the total gate charge of this MOSFET?

The total gate charge is 165 nC maximum at Vdd=30V, Id=80A, Vgs=10V.

What is the continuous drain current rating at Tc=25°C?

The continuous drain current is 84A at Tc=25°C.

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