| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,207 pcs
|
1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| Storage Temperature |
The IPA029N06N is an N-Channel enhancement mode power MOSFET from Infineon, designed for high-efficiency power conversion and switching applications. It offers a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 84A at 25°C case temperature, with a pulsed current capability of 336A.
Key electrical characteristics include a maximum on-resistance (RDS(on)) of just 2.9mΩ at VGS=10V, enabling low conduction losses. The device features a typical gate charge (QG) of 56nC and an output charge (QOSS) of 65nC, supporting fast switching. It is rated for a maximum power dissipation of 38W at 25°C and can operate over a junction temperature range of -55°C to 175°C.
The MOSFET is housed in a PG-TO220-FP (full-pack) through-hole package, providing electrical isolation between the mounting tab and the die. The device is lead-free and halogen-free, with Pb-free lead plating.
The maximum drain-source voltage (VDS) is 60 V.
The maximum continuous drain current (ID) is 84 A at TC=25°C with VGS=10V.
The maximum on-resistance (RDS(on)) is 2.9 mΩ at VGS=10V and ID=84A.
The IPA029N06N is housed in a PG-TO220-FP through-hole package.
The operating and storage temperature range is -55°C to 175°C.