BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46,977 pcs
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46977 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,540 pcs
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1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| SVHC Present |
The Texas Instruments INA121U is a FET-input, low power instrumentation amplifier designed for high accuracy applications. It operates over a wide supply voltage range from ±4.5V to ±18V, with a typical quiescent current of 0.45mA.
Key electrical specifications include a low input offset voltage of ±500µV maximum, a low input bias current of ±0.05nA maximum, and a high Common-Mode Rejection Ratio (CMRR) of 106dB minimum. The amplifier offers a voltage gain range from 1 to 10000 V/V and a bandwidth of 0.6MHz at minimum gain.
For enhanced reliability, the INA121U includes overvoltage protection up to ±40V. It is available in SOIC and PDIP packages, suitable for various mounting requirements.
This instrumentation amplifier is well-suited for applications requiring precise signal conditioning and amplification due to its combination of low noise, low offset, and high CMRR.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.16 | $5.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The INA121U operates from a single supply of 4.5V to 36V or a dual supply of ±2.25V to ±18V.
The INA121U is available in SOIC (D) and PDIP (P) packages.
The operating temperature range is -40°C to 85°C.
The bandwidth at minimum gain is 0.6 MHz.
The typical quiescent current is 0.45 mA.
The maximum input offset voltage is ±500 µV, with a typical value of ±200 µV.