Mfr Part #:

IMZA120R040M1HXKSA1

Infineon IMZA120R040M1HXKSA1 is a 1200V, 55A N-Channel Silicon Carbide (SiC) MOSFET in a TO-247-4 through-hole package. It features a typical on-resistance of 39 mΩ and is designed for high-efficiency power conversion.

✓ Total Stock: 2,700 pcs

$ Price Range: $7.73 - $15.44

IMZA120R040M1HXKSA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,700 pcs On Request	2700 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IMZA120R040M1HXKSA1 Description

Short technical summary and product information.

The Infineon IMZA120R040M1HXKSA1 is a 1200V, 55A N-Channel Silicon Carbide (SiC) MOSFET from the CoolSiC family. It utilizes advanced SiC Trench MOSFET technology with .XT interconnection for superior thermal performance. The device offers a typical on-resistance of 39 mΩ at Vgs=18V and a maximum on-resistance of 54.4 mΩ at Id=19.3A, Vgs=18V. It features a benchmark gate threshold voltage of 4.2V typical (5.2V max) and a short circuit withstand time of 3 µs. The MOSFET is housed in a PG-TO247-4-8 package with 4 pins including a Kelvin source contact for optimized gate drive. It supports a maximum gate-source voltage of +20V/-5V and is capable of dissipating up to 227W at Tc=25°C. The device is qualified for industrial applications per JEDEC standards and is suitable for general purpose drives, EV charging, UPS, and solar inverters.

IMZA120R040M1HXKSA1 Quick Information

Product Type: SiC MOSFET

Series: IMZA120R040

Canonical Name: Infineon Technologies IMZA120R040M1HXKSA1 CoolSiC 1200V SiC Trench MOSFET

Subcategory: N-Channel Power MOSFET

IMZA120R040M1HXKSA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IMZA120R040M1HXKSA1 Estimated Pricing

Qty	Low	High
1+	$15.44	$15.44
10+	$10.77	$10.77
100+	$8.80	$8.80
480+	$7.73	$7.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMZA120R040M1HXKSA1 Features

1200V drain-source voltage rating.
55A continuous drain current at 25°C.
39 mΩ typical on-resistance at 18V.
3 µs short circuit withstand time.
TO-247-4 package with Kelvin source.

IMZA120R040M1HXKSA1 Applications

General purpose motor drives (GPD).
EV charging infrastructure.
Online and industrial UPS systems.
String inverters and solar optimizers.

IMZA120R040M1HXKSA1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IMZA120R040M1HXKSA1?

The maximum drain-source voltage (Vdss) is 1200 V.

What is the continuous drain current rating?

The continuous drain current is 55 A at Tc = 25°C.

What is the typical on-resistance of this SiC MOSFET?

The typical on-resistance is 39 mΩ at Vgs = 18 V, Tvj = 25°C.

What package does the IMZA120R040M1HXKSA1 come in?

It comes in a PG-TO247-4-8 (TO-247-4) through-hole package with 4 pins.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IMZA120R040M1HXKSA1 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	55 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	1620 nF
Mounting Type	Through Hole
Number of Pins	4
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	227 W
Rds On (Max) @ Id, Vgs	54.4 mΩ
Supplier Device Package	PG-TO247-4-8
Tape & Reel	No
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+20V, -5V
Vgs(th) (Max) @ Id	5.2 V