| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage |
The IMZ4T108 is a bipolar transistor array from ROHM Semiconductor that integrates one NPN and one PNP transistor in a single surface-mount package. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 32V, a maximum collector current (Ic) of 500mA, and a maximum power dissipation of 300mW. The DC current gain (hFE) is guaranteed to be at least 120 at Ic=100mA and Vce=3V. The transition frequency (ft) is 250MHz for the NPN transistor and 200MHz for the PNP transistor, with a maximum collector-emitter saturation voltage (Vce(sat)) of 600mV under specified test conditions.
The device is housed in a compact SMT6 package (also known as SC-74 or SOT-457) with six leads, suitable for automated assembly. It is rated for an operating junction temperature up to 150°C. The IMZ4T108 is a practical choice for designs requiring a complementary transistor pair in a small footprint.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.12 | $0.12 |
| 6,000+ | $0.11 | $0.11 |
| 9,000+ | $0.10 | $0.10 |
| 15,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 32V.
The maximum collector current (Ic) is 500mA (0.5A).
The device is available in SC-74 and SOT-457 packages, which are equivalent to the SMT6 supplier device package.
The maximum junction temperature is 150°C.
RoHS3 compliant status is listed but unverified. Treat as low-confidence.
The minimum DC current gain (hFE) is 120 at Ic=100mA and Vce=3V.
The transition frequency (ft) is 250MHz for the NPN transistor and 200MHz for the PNP transistor.